MALVERN, PA — Vishay Intertechnology (NYSE: VSH) recently introduced four new 100-volt Gen 2 Trench MOS Barrier Schottky ...

Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

Infineon Technologies AG has introduced the CoolSiC Schottky diode 2000 V G5, targeting industrial applications with higher power levels and minimized power losses. The CoolSiC Schottky diode is the ...

The 178-product lineup assembled by ROHM helps contribute to lower power consumption, smaller size, and higher reliability in a wider range of applications. A diode is one of the basic components ...

Infineon Technologies AG expands the comprehensive SiC portfolio introducing the 5th generation1200V thinQ!™ SiC Schottky diodes. Infineon Technologies AG expands the comprehensive SiC portfolio ...

CAMARILLO, Calif.--(BUSINESS WIRE)--Semtech Corporation (Nasdaq: SMTC), a leading supplier of high-performance analog and mixed-signal semiconductors and advanced algorithms, announced the ...

40 A to 240 A Dual-Diode and Single Phase Bridge Devices Offer Low Forward Voltage Drop Down to 1.36 V and QC Down to 56 nC MALVERN, Pa., Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc.

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announces ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...