This innovation successfully addresses the challenge of dual-mode operation in non-volatile memory, offering compatibility with silicon-based semiconductor processes for large-scale integration. The ...

Ferroelectric binary oxides thin films are garnering attention for their superior compatibility over traditional perovskite-based ferroelectric materials. Its compatibility and scalability within the ...

Coughlin Associates and Objective Analysis released their 2024 report on emerging non-volatile memories, A Deep Look at New Memories. These memories include magnetic random access memory, MRAM; ...

A recent report explores how new non-volatile memories will play in monetizing AI, leading to significant revenue growth for ...

Scientists at Penn State have harnessed a unique property called incipient ferroelectricity to create a new type of computer memory that could revolutionize how electronic devices work, such as using ...

The 1s and 0s in an ordinary computer are stored by applying high (1) or low (0) electric voltage to a capacitor, making it crucial to have a continual supply of electricity. Devices made from ...

Certain two-dimensional (2D) van der Waals-bonded bilayers (e.g., WTe₂ and h-BN) exhibit “sliding ferroelectricity (SF),” where electric polarization arises from specific stacking configurations ...

Non-volatile memory is an important component in a wide range of high-performance embedded applications. Especially, many consumer, industrial, and medical applications need increased re-writability ...

What is PCMO ReRAM? Difference between filamentary and PCMO ReRAM. Why tunable persistence is important. The idea of non-volatile, resistive RAM (ReRAM) has been around for a while. Its aim is to ...