A vacuum channel transistor controls electrons at the cathode to suppress gate leakage, letting it work inside amplifiers and ...

Samsung researchers have published a detailed account of an experimental NAND architecture that aims to cut one of the technology’s largest power drains by as much as 96%. The work — Ferroelectric ...

For decades, the speed of transistors has been approaching its physical limit. Now, researchers have built a new type of ...

TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...

(Nanowerk Spotlight) Organic semiconductors have long held promise for enabling deformable electronic devices that can be manufactured at low cost and high volumes using printing techniques. However, ...