Transition-metal dichalcogenides (TMDs) are a class of material that’s been receiving significant attention as a possible successor of silicon. Recently, a team of researchers has demonstrated the use ...
Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to ...
For semiconductor designers this outlines how a thin ferroelectric stack can retain polarization and support memory ...
Developed core technology that will allow practical implementation of high-density, low-power 3D DRAM, presented at IEEE International Electron Devices Meeting (IEDM) ...
The Chosun Ilbo on MSN
SK Hynix unveils HBM4 16-layer 48GB
SK Hynix will unveil a lineup of next-generation high-bandwidth memory (HBM) products at CES2026. The global No. 1 HBM ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
Nvidia has reportedly begun testing the limits of the global AI memory supply chain by signaling interest in 16-layer ...
The company showcases 16-layer HBM4 product with 48GB, next generation HBM product, for the first time during the exhibition. The product is the next generation product of 12-layer HBM4 product with ...
Researchers from Washington University in St. Louis, MIT, Yonsei University, Inha University, Georgia Institute of Technology, and the University of Notre Dame demonstrated monolithic 3D integration ...
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