This powerful driver can source up to 2.5A with a 1.2 Ohm pull-down impedance for driving the top MOSFET and source 3A with a 0.55 Ohm pull-down impedance for the bottom MOSFET, making it ideal for ...
Magnachip Semiconductor Corporation (NYSE: MX, "Magnachip") today announced the launch of its new 7 th -generation 24V MXT LV MOSFET 1 specifically designed for battery protection circuits in ...
Designed for highly efficient, low- R DS(ON) power MOSFETs, the V-Tr FET technology developed by SilTerra Malaysia Sdn Bhd and South Sea Semiconductor Ltd. features a narrow-trench gate electrode with ...
onsemi and FORVIA HELLA signed a new long-term agreement to adopt onsemi’s PowerTrench® T10 MOSFET technology across advanced automotive platforms. T10 power MOSFETs, manufactured at onsemi’s state-of ...
DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in ...
Renesas Technology's Latest Integrated Driver-MOSFET Achieves Industry's Best Power Supply Efficiency – 96.5 percent – and Has a 6x6mm Package for Intel DrMOS Standard Products Renesas announced the ...
The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy ...
SUNNYVALE, Calif.--(BUSINESS WIRE)-- Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power discretes, ICs, modules, and ...
Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...
DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "GaN on Si HEMT vs SJ MOSFET: Technology and Cost comparison" report to their offering. The report proposes an in-depth ...
MOSFET startup Inergy Technology has recently developed new BLDC electric motor drivers for cloud server and data center cooling systems. Trial production with major server customers in Japan and ...
GENEVA, SWITZERLAND—A power MOSFET developed by STMicroelectronics takes advantage of the company’s ribbon-bonding technology. This delivers a low typical RDS(on) of 800 micro-ohms, which ST claims is ...
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