High Electron Mobility Transistors (HEMTs) represent a pivotal class of devices in modern semiconductor technology, valued for their exceptional frequency performance and low noise characteristics.

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

The first generation of GaN transistors has yielded efficient devices that operate at 600V with turn-on and turn-off times of 3.5 nsec and 7.0 nsec, respectively. Switching times are improved through ...

One month after announcing a ferroelectric semiconductor at the nanoscale thinness required for modern computing components, a team has now demonstrated a reconfigurable transistor using that material ...

Growth temperature is a critical parameter determining the sheet carrier density of scandium aluminum nitride (ScAlN)-based heterostructures, grown using the sputtering technique. Gallium nitride (GaN ...

A research team has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Amplitech Group, Inc. (NASDAQ:AMPG) shares are trading higher on Wednesday after the company announced the development and deployment of its proprietary low-noise cryogenic High Electron Mobility ...

Imec claims a new benchmark for mobile RF transistor performance. The approach, based on a gallium nitride (GaN) metal-oxide semiconductor high-electron-mobility transistor (MOSHEMT) on silicon (Si), ...

The theoretical advantages of GaN-based power transistors are now being realized in mainstream system designs. Power supplies for data centers and telecom switching racks are two application areas ...

High Electron Mobility Transistors (HEMTs) underpin many advanced electronic applications due to their superior performance in high-frequency and high-power regimes. The ongoing miniaturisation and ...