For decades, traditional lithography techniques—such as electron beam lithography and nanoimprinting—have struggled to meet the demand for ultra-fine, high-aspect-ratio structures in general. Similar ...

A technical paper titled “Inline metrology of high aspect ratio hole tilt and center line shift using small-angle x-ray scattering” was published by researchers at Bruker Nano and Lam Research. “High ...

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...

In a leap forward for miniaturized electronics, researchers have unveiled a groundbreaking method to fabricate high-aspect-ratio 3D microstructures with sub-10 micron resolution—tackling one of the ...

Researchers developed a hybrid method to build precise 3D RF microstructures, boosting performance, tunability, and cutting device size by up to 45%. (Nanowerk News) In a leap forward for miniaturized ...