Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...

Since graphene has a low absorption coefficient in the absorption band, researchers generally use graphene as a carrier collection layer, and look for another strong light-absorbing material as the ...

Prof Zhang Zhiyong's team at Peking University developed a heterojunction-gated field-effect transistor (HGFET) that achieves high sensitivity in short-wave infrared detection, with a recorded ...

A Si–Gr–Ge transistor has been demonstrated. The Schottky emitter provides an emitter charging time of ~118 ps with a current of 692 A cm−2 and a capacitance of 41 nF cm−2, which is expected to ...

In a recent study presented at the IEEE Nuclear and Space Radiation Effects Conference in July 2022, a research team led by a professor from the Georgia Institute of Technology (Georgia Tech) discuss ...

Researchers demonstrate “a low-voltage organic ternary logic circuit, in which the organic HTR was vertically integrated with the organic nonvolatile flash memory.” “Multi-valued logic (MVL) circuits ...

CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...

Researchers in the US claim to have fabricated a transistor that bridges the worlds of optics and electronics. “We have demonstrated light emission from the base layer of a heterojunction bipolar ...

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics ...