EDN

GaN fundamentals: Hybrid structures, HEMT, and substrate choices

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...
EDN

GaN fundamentals: 2DEG, crystal structure, and figure of merit

Gallium nitride (GaN) power devices are redefining the limits of switching converters by combining wide bandgap physics with lateral HEMT structures optimized for fast, low-loss operation. This ...
Electronic Design

GaN HEMTs Bring Low-Noise Power to Switching Apps

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Semiconductor Engineering

Improving GaN Device Architectures

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...
AZOM

How To Measure High Aspect Ratio HEMT Vias Non-Destructively Using 3D Optical Profiling

Wide bandgap semiconductor materials are highly useful in power electronics due to their ability to work at high temperatures, power, and frequency. Gallium nitride (GaN) is a wide bandgap ...
Electronic Design

GaN Overvoltage Effects: Degradation and Recovery

What's needed to fill in the gaps in understanding GaN HEMTs and their catastrophic failures. Degradation mechanisms that plague GaN HEMTs. Why overvoltage ruggedness and surge-energy withstand go ...
Semiconductor Engineering

GaN Power Devices Power Up

GaN devices are gaining traction due to their ability to tolerate higher voltages. New approaches such as chiplets offer faster switching with less loss. The first applications to benefit from GaN ...
Longview News-Journal

New Short Film Takes Behind-the-scenes Look at Next-generation GaN Power Semiconductor Device Development

- Making GaN Easy to Use: Engineering Challenges from R&D to Practical Application - ROHM Co., Ltd. has released the sixth German-language installment in the "Stories of Manufacturing" series of short ...
Nature

Optimization of electric field distribution for AlGaN/GaN MIS-HEMT with thick i-GaN cap layer

The Nature Index 2026 Research Leaders reveal the leading institutions and countries/territories in the natural sciences, health sciences, applied sciences and social sciences, according to their ...
Nature

Integration of top-side low-temperature diamond on AlGaN/GaN RF HEMT for device-level cooling

The Nature Index 2026 Research Leaders reveal the leading institutions and countries/territories in the natural sciences, health sciences, applied sciences and social sciences, according to their ...